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Normal mode
*1
FWE = 1
FWE = 0
On-board
programming mode
Software programming
disable state
Notes: 1.
: Normal mode
2. Do not make a state transition by setting or clearing multiple bits simultaneously.
3. After a transition from erase mode to the erase setup state, do not enter erase mode without passing
through the software programming enable state.
4. After a transition from program mode to the program setup state, do not enter program mode without
passing through the software programming enable state.
Figure 17.10 FLMCR Bit Settings and State Transitions
17.5.1
Program Mode
When writing data or programs to flash memory, the program/program-verify flowchart shown in
figure 17.11 should be followed. Performing programming operations according to this flowchart
will enable data or programs to be written to flash memory without subjecting the device to
voltage stress or sacrificing program data reliability. Programming should be carried out 32 bytes
at a time.
The wait times (x, y, z, α, ß, γ, ε, η) after bits are set or cleared in the flash memory control
register (FLMCR) and the maximum number of programming operations (N) are shown in table
22.20 in section 22.2.6, Flash Memory Characteristics.
ESU = 1
*2
SWE = 1
Software
programming
enable
SWE = 0
state
PV = 0
: On-board programming mode
*3
Erase setup
state
ESU = 0
Erase-verify
EV = 1
mode
EV = 0
PSU = 1
*4
Program
PSU = 0
setup state
PV = 1
Program-verify
mode
E = 1
Erase mode
E = 0
P = 1
Program mode
P = 0
497
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