Agilent Technologies 93000 SOC Series Training Manual page 590

THS5641A
8-BIT, 100 MSPS, CommsDAC
Appendix C
DIGITAL-TO-ANALOG CONVERTER
SLAS277A –MARCH 2000 – REVISED SEPTEMBER 2002
electrical characteristics over recommended operating free-air temperature range, AV
DV = 5 V, IOUT = 20 mA (unless otherwise noted)
DD FS
dc specifications
PARAMETER
Resolution
DC accuracy †
INL Integral nonlinearity
DNL Differential nonlinearity
Monotonicity
Analog output
Offset error
Gain error
Full scale output current ‡
Output compliance range p p
Output resistance
Output capacitance
Reference output
Reference voltage
Reference output current §
Reference input
V EXTIO Input voltage range
Input resistance
Small signal bandwidth ¶
Input capacitance
Temperature coefficients
Offset drift
Gain drift
Reference voltage drift
Power supply
AV DD Analog supply voltage
DV DD Digital supply voltage
Analog supply current
I AVDD
Sleep mode supply current
Digital supply current #
I DVDD
||
Power dissipation p
AV DD
Power supply rejection ratio pp
DV DD
Operating range
† Measured at IOUT1 in virtual ground configuration.
‡ Nominal full-scale current IOUT FS equals 32X the IBIAS current.
§ Use an external buffer amplifier with high impedance input to drive any external load.
¶ Reference bandwidth is a function of external cap at COMP1 pin and signal level.
# Measured at f CLK = 50 MSPS and f OUT = 1 MHz.
|| Measured for 50 Ω R LOAD at IOUT1 and IOUT2, f CLK = 50 MSPS and f OUT = 20 MHz.
Specifications subject to change
4
TEST CONDITIONS
° °
T A = –40°C to 85°C
Without internal reference
With internal reference
AV DD = 5 V, IOUT FS = 20 mA
AV DD = 3.3 V IOUT FS = 20 mA
Without C COMP1
Without internal reference
With internal reference
Sleep mode
AV DD = 5 V, DV DD = 5 V
AV DD = 3.3 V, DV DD = 3.3 V, IOUT FS = 20 mA
590
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
MIN
8
–0.25
–0.25
2
–1
–1
1.18
0.1
3
3
IOUT FS = 20 mA
–40
= 5 V,
DD
TYP MAX UNIT
Bits
±0.1
0.25 LSB
±0.05
0.25 LSB
Monotonic
0.02 %FSR
2.3
%FSR
1.3
20 mA
1.25 V
0.6 V
300 kΩ
5 pF
1.22 1.32 V
100 nA
1.25 V
1 MΩ
1.3 MHz
100 pF
0
±40
ppm of
FSR/°C
±120
±35
5.5 V
5.5 V
25 30 mA
3 5 mA
5 6 mA
175
mW
100
±0.4
%FSR/V
±0.025
°C
85