Renesas H8S/2633 Series Hardware Manual page 996

A18–A0
CE CE
OE OE
WE
I/O7–I/O0
Note: Data is latched on the rising edge of WE.
Figure 22-19 Timing Waveforms for Memory Read after Memory Write
Table 22-17 AC Characteristics in Transition from Memory Read Mode to Another Mode
(Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
942
Command write
t
t
ces
ceh
t
wep
t t
f r
t t
ds dh
= 3.3 V ±0.3 V, V
CC
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
r
t
f
Memory read mode
Address stable
t
nxtc
= 25°C ±5°C)
= 0 V, T
SS a
Min
20
0
0
50
50
70
—
—
Max Unit
µs
—
— ns
— ns
— ns
— ns
— ns
30 ns
30 ns