26.6
Flash Memory Characteristics
Table 26-13 Flash Memory Characteristics
Conditions: PV
= 4.5 V to 5.5 V, AV
CC
T
= –20°C to +75°C (regular specifications), T
a
specifications)
Item
1
Programming time*
*
1
3
5
Erase time*
*
*
Number of rewrites
Programming Wait time after SWE1 bit setting*
Wait time after PSU1 bit setting*
Wait time after P1 bit setting*
Wait time after P1 bit clearing*
Wait time after PSU1 bit clearing*
Wait time after PV1 bit setting*
Wait time after H'FF dummy write*
Wait time after PV1 bit clearing*
Maximum number of writes*
Common
Wait time after SWE1 bit clearing*
Erasing
Wait time after SWE1 bit setting*
Wait time after ESU1 bit setting*
Wait time after E1 bit setting*
Wait time after E1 bit clearing*
Wait time after ESU1 bit clearing*
Wait time after EV1 bit setting*
Wait time after H'FF dummy write*
Wait time after EV1 bit clearing*
Maximum number of erases*
Notes: *1 Follow the program/erase algorithms when making the time settings.
*2 Programming time per 128 bytes. (Indicates the total time during which the P1 bit is set
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
1084
= 4.5 V to 5.5 V, V
CC
2
4
*
SS
= –40°C to +85°C (wide-range
a
Symbol Min
t
—
P
t
—
E
N
—
WEC
1
x0
1
1
y
50
1
4
*
z0
—
z1
—
z2
—
α
1
5
β
1
5
γ
1
4
ε
1
2
η
1
2
1
4
N1
—
*
N2
—
1
x1
100
1
x
1
1
y
100
1
5
*
z
—
α
1
10
β
1
10
γ
1
6
ε
1
2
η
1
4
1
5
*
N
—
= AV
= PLLV
= 0 V,
SS
SS
Typ
Max
Unit
10
200
ms/128 bytes
50
1000
ms/block
—
100
Times
µs
—
—
µs
—
—
µs
—
30
µs
—
10
µs
—
200
µs
—
—
µs
—
—
µs
—
—
µs
—
—
µs
—
—
—
6
Times
—
994
Times
µs
—
—
µs
—
—
µs
—
—
—
10
ms
µs
—
—
µs
—
—
µs
—
—
µs
—
—
µs
—
—
—
100
Times