Sram Timing For Write Access - Siemens ERTEC 200P-2 Manual

t Ready
RDY_ACTIV
Time
E
t Ready
RDY_DELAY
Time
t Ready
RDY_DELAY
Time
t Active data bus
ADB
t Recovery Phase
RECOV
Tc = 8 ns (AHB Clock = 125 MHz);
Based
Load-value for Timing = 20pF
on
Buffer Driverstrength = 12mA
IO-Voltage = 1.8V
1)
BANK_0-4_CONFIG register
2)
in ASYNC_BANK0...4 register; Bit 31 – WSM = '0'
3)
in ASYNC_BANK0...4 register; Bit 31 – WSM = '1'

3.3.1.1.2 SRAM Timing for write access

Parame- Description
ter
t Write
W_SU
Time
t Write
W_STROBE
Time
t Write Hold-Time
W_HOLD
t Ready
RDY_ACTIV
Time
E
t Ready
RDY_DELAY
Time
Copyright © Siemens AG 2016. All rights reserved
Technical data subject to change
Active 9.5 ns
Delay 2 Tc + 2.6
ns
Delay 1 Tc + 2.6
ns
8 ns
0 ns
Min
Setup- 0 Tc – 1.3
ns
Strobe- 1 Tc – 1.3
ns
1 Tc – 5.1
ns
Active 9.5 ns
Delay 2 Tc + 6.2
ns
453
ASYNC_BANKx.EW
3 Tc + 10.1 ASYNC_BANKx.EW
ns
2 Tc + 10.1 ASYNC_BANKx.EW
ns
8 ns EXTENDED_CONFIG.A
DB
120 ns RECOV_CONFIG.REC
OVx
Max depends on Register
15 Tc + 5.1 ASYNC_BANKx.W_SU
ns
64 Tc + 1.6 ASYNC_BANKx.W_ST
ns ROBE
8 Tc + 1.2 ASYNC_BANKx.W_HO
ns LD
ASYNC_BANKx.EW
3 Tc + 10.4 ASYNC_BANKx.EW
ns
2)
3)
Note
1)
1)
1)
2)
ERTEC 200P-2 Manual
Version 1.0