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2-44
Table 2-5 (cont.)
Command sequence for memory patterns test example
Command sequence
Setup Insulation Resistance Test for Leakage Path A – Memory Location 8:
ROUT:MEM:CHAN 8,
(@101,108,109,112,122,116,118,123,121)
:ROUT:MEM:SOUR:LEV 8,500,(@128)
:ROUT:MEM:DEL 8,2
:SENS:VOLT:NPLC 1,(@M8)
:CALC1:FORM S1V,(@M8)
:CALC1:STAT ON,(@M8)
:ROUT:MEM:READ:STAT 8,ON
Setup Insulation Resistance Test for Leakage Path B – Memory Location 9:
ROUT:MEM:CHAN 9,
(@104,108,109,112,122,116,118,123,121)
:ROUT:MEM:SOUR:LEV 9,500,(@128)
:ROUT:MEM:DEL 9, 2
:SENS:VOLT:NPLC 1,(@M9)
:CALC1:FORM S1V,(@M9)
:CALC1:STAT ON,(@M9)
Model 2790 SourceMeter
Specify relays to close (109 and 112 are shunt bars).
Set Vsrc to 500V for M8. Since source level is the
same as in Initial Setup routine, this command can
be left out.
Set Total Memory Delay = 2s; V-source will settle
completely during this soak period, so additional
settling delays are unnecessary.
Set A/D integration time to 1 PLC.
Select S1VOHMS math function; selecting this
function automatically selects DCV measurement
function and the 10V measurement range.
Enable the math function.
Enable measurement during scan; during a scan the
measurement is initiated automatically. This does
not apply when a memory pattern is recalled as
shown below. In the latter case, the reading must be
initiated explicitly as also shown below.
Specify relays to close (109 and 112 are shunt bars).
Set Vsrc to 500V for M9. Since source level is the
same as in Initial Setup routine, this command can
be left out.
Set Total Memory Delay = 2s; V-source will settle
completely during this soak period, so additional
settling delays are unnecessary.
Set A/D integration time to 1 PLC.
Select S1VOHMS math function; selecting this
function automatically selects DCV measurement
function and the 10V measurement range.
Enable the math function.
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