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K.6
Oscillator and PLL Electrical Characteristics
= 2.6 V ± 0.1 V, V
Note: (V
DD
Characteristic
1 Oscillator Startup time (for typical crystal capacitive load)
4-MHz crystal
20-MHz crystal
2 PLL Lock Time
3 PLL Operating Range
4 Crystal Operating Range, MODCK=0b010,0b110
MODCK[1:3] = 0b001, 0b011, 0b100, 0b101, 0b111
5 PLL Jitter
PLL Jitter (averaged over 10 µs)
6 Limp Mode Clock Out Frequency
7 Oscillator Bias Current (XTAL)
4 MHz
20 MHz
8 Oscillator Drive (XTAL)
9 Oscillator Bias Resistor
1
Assumes stable power and oscillator.
2
F
is 2x the system frequency.
VCOOUT
3
Estimated value, real values to be characterized and updated.
K.7
Flash Electrical Characteristics
= 2.6 V ± 0.1 V, V
Note: (V
DDF
Table K-6. Array Program and Erase Characteristics
Symbol
T
Block Erase Time
ERASE
T
Module Erase Time
ERASEM
T
Word Programming Time
PROG
1
Typical program and erase times assume nominal supply values and 25 °C.
2
Erase time specification does not include pre-programming operation
3
Word size is 32 bits.
The maximum hardware programming time of the entire Flash (not including the shadow row) is 20 µs x (512 Kbytes
4
/ 4 bytes per word), or 131,072 words, (no software overhead).
MOTOROLA
PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE
= 5.0 V ± 0.25 V, T
DDH
A
Table K-5. Oscillator and PLL
2
= 5.0 V ± 0.25 V, T
FLASH
Meaning
2
2
3, 4
Appendix K. Electrical Characteristics
Oscillator and PLL Electrical Characteristics
= T
to T
)
L
H
Symbol
Min
OSCstart4
OSCstart20
T
LOCK
F
30
VCOOUT
F
3
CRYSTAL
15
F
-1%
JIT
F
-0.3%
JIT10
—
3
I
BIAS
—
| 1.5 |
I
7
OSC
R
0.5
OSC
= T
to T
, T
= T
to T
A
L
H
B
L
Minimum
Typical
Typical
Max
10
10
1
1000
112
5
25
+1%
+0.3%
3
3
11
17
| 0.8 |
| 4.0 |
—
1
3
)
H
Value
1
Maximum
3
12
13
60
15
20
Unit
mS
mS
Input
Clocks
MHz
MHz
MHz
—
MHz
mA
mA
mA
MΩ
Units
s
s
µs
K-11
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