Omron SYSMAC C500-NC113 Operation Manual page 188

Command Settings
Wd m+1
Wd m+2
Wd m+3
Command Execution
TEACH positioning action No.
Word m+3, bits 11 to 00
TEACH
Word m+1, bit 09
Teaching Completed Flag
Word s+0, bit 05
Busy Flag
Word s+0, bit 07
9-9 EEPROM Reading and Writing
Settings
Bit 09 of word m+1/m+5 (X/Y axis)
TEACH positioning
action number
1
0
1
0
1
0
Note The only portion of the positioning action data that is set by the teaching opera-
tion is that shown below. The rest of the data must be set in advance, before
TEACH is executed. The following diagram shows the data configuration for the
positioning action.
15 12
+0 word
+1word Speed No.
+2 word
Accel/decel pattern No.
+3 word
+4 word
Target position (rightmost digits)
+5word
Sign
Depending on the EEPROM read/write designation (word m+4, bit 13), either
the data stored in EEPROM (positioning actions, parameters, acceleration/de-
celeration patterns, speeds, dwell times) is read to the internal RAM or the con-
tents of the internal RAM are written to EEPROM when the EEPROM command
(word m+4, bit 12) is executed.
Wd m+4
Bit 09 (TEACH)
When this bit is turned ON (↑), the present
position is written as the target position for
the designated positioning action.
Bits 11 to 00
Set the positioning action number (000 to 499)
for which the target position is to be changed.
08 04 00
Positioning action address
0 5
Dwell time No.
Completion
Output code
code
Target position (leftmost digits)
Bit 12 (EEPROM command)
Bit 13 (EEPROM read/write designation)
Section 9-9
Only this portion is set
by teaching.