Rtc External Rtcrst# Circuit; Vbias Dc Voltage And Noise Measurements; Rtcrst# External Circuit For The 6300Esb Rtc - Intel 855GME Design Manual

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Intel
855GME Chipset and Intel
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Intel
6300ESB Design Guidelines
9.11.5

RTC External RTCRST# Circuit

Figure 131.

RTCRST# External Circuit for the 6300ESB RTC

The 6300ESB RTC requires some additional external circuitry. The RTCRST# signal is used to
reset the RTC well. The external capacitor and the external resistor between RTCRST# and the
RTC battery (VBAT) were selected to create an RC time delay, such that RTCRST# will go high
some time after the battery voltage is valid. The RC time delay should be in the range of
18-25 ms. When RTCRST# is asserted, bit 2 (RTC_PWR_STS) in the GEN_PMCON_3 (General
PM Configuration 3) register is set to 1, and remains set until software clears it. As a result of this,
when the system boots, the BIOS knows that the RTC battery has been removed.
The RTCRST# signal may also be used to detect a low battery voltage. RTCRST# will be asserted
during a power up from G3 state if the battery voltage is below 2 V. This sets the RTC_PWR_STS
bit as described above. When desired, BIOS may request that the user replace the battery.
This RTCRST# circuit is combined with the diode circuit (shown in
well to be powered by the battery when the system power is not available.
example of this circuitry that is used in conjunction with the external diode circuit.
9.11.6
V
BIAS
V
is a DC voltage level necessary for biasing the RTC oscillator circuit. This DC voltage level
BIAS
is filtered out from the RTC oscillation signal by the RC Network of R2 and C3 (see
therefore, it is a self-adjusted voltage. Board designers should not manually bias the voltage level
on V
BIAS
condition of the RTC circuit.
V
should be at least 200 mV DC. The RC network of R2 and C3 will filter out most of AC
BIAS
signal that exist on this ball, however, the noise on this ball should be kept minimal in order to
ensure the stability of the RTC oscillation.
Probing V
Op-Amp). See Application Note AP-728 for further details on measuring techniques.
238
®
6300ESB ICH Embedded Platform Design Guide
DIODE/
BATTERY
CIRCUIT
1 K
+
DC Voltage and Noise Measurements
. Checking V
level is used for testing purposes only to determine the right bias
BIAS
requires the same technique as probing the RTCX1, RTCX2 signals (using
BIAS
V
3_3
CCSUS
1.0 µF
20 K
1.0 µF
RTCRST#
CIRCUIT
V
RTC
CC
RTCRST#
B1184-02
Figure
130) to allow the RTC
Figure 131
is an
Figure
129);

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