Epson S1C31D50 Technical Manual page 348

Cmos 32-bit single chip
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OSC3 oscillator circuit characteristics
Unless otherwise specified: V
DD
Item
Crystal/ceramic oscillator
oscillation start time
Crystal/ceramic oscillator
internal gate capacitance
Crystal/ceramic oscillator
internal drain capacitance
Internal oscillator
oscillation start time
Internal oscillator
oscillation frequency
*1 Corrected value immediately after the auto-trimming operation has completed.
OSC3 internal oscillation frequency-temperature characteristic
Typ. value
18
CLGOSC3.OSC3FQ[1:0] bits = 0x3
16
14
12
10
8
6
4
2
0
-50
-25
0
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
Item
EXOSC external clock duty ratio
High level Schmitt input threshold voltage V
Low level Schmitt input threshold voltage
Schmitt input hysteresis voltage
V
T+
EXOSC
S1C31D50/D51 TECHNICAL MANUAL
(Rev. 2.00)
= 1.8 to 5.5 V, V
= 0 V, Ta = 25°C
SS
Symbol
Condition
t
CLGOSC3.OSC3MD bit = 1, Crystal resonator
sta3C
CLGOSC3.OSC3MD bit = 1, Ceramic resonator
C
CLGOSC3.OSC3MD bit = 1
GI3C
C
CLGOSC3.OSC3MD bit = 1
DI3C
t
CLGOSC3.OSC3MD bit = 0
sta3I
f
CLGOSC3.OSC3MD bit = 0,
OSC3I
CLGOSC3.OSC3FQ[1:0] bits = 0x3
CLGOSC3.OSC3MD bit = 0,
CLGOSC3.OSC3FQ[1:0] bits = 0x1
CLGOSC3.OSC3MD bit = 0,
CLGOSC3.OSC3FQ[1:0] bits = 0x0
CLGOSC3.OSC3MD bit = 0,
CLGOSC3.OSC3FQ[1:0] bits = 0x3
0x1
0x0
25
50
75
100
Ta [°C]
= 1.8 to 5.5 V, V
= 0 V, Ta = -40 to 85°C
SS
Symbol
t
t
= t
EXOSCD
EXOSCD
T+
V
T-
DV
T
t
= 1/f
EXOSC
EXOSC
t
EXOSCH
V
T+
V
T-
Seiko Epson Corporation
22 ELECTRICAL CHARACTERISTICS
Ta
0 to 50°C
-20 to 60°C
-40 to 85°C
-40 to 85°C
-40 to 85°C
*1
Condition
/t
EXOSCH
EXOSC
t
EXOSC
t
EXOSCH
V
T+
V
T-
Min.
Typ.
Max.
20
1
5
5
3
15.68
16
16.32
15.60
16
16.40
15.44
16
16.56
7.7
8.3
8.9
3.8
4.2
4.6
15.84
16
16.16
Min.
Typ.
Max.
46
54
0.5 × V
0.8 × V
DD
DD
0.2 × V
0.5 × V
DD
DD
180
= 1/f
EXOSC
V
T+
Unit
ms
ms
pF
pF
µs
MHz
MHz
MHz
MHz
MHz
MHz
Unit
%
V
V
mV
22-7

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