NEC PD703114 User Manual page 616

The self-programming interface is outlined below.
15.7.4 Hardware environment
To write or erase the flash memory, a high voltage must be applied to the V
circuit that can generate a write voltage (V
system. An example of a circuit that can select a voltage to be applied to the V
below.
Figure 15-14. Example of Self-Programming Circuit Configuration
= 5.0 V ±0.5 V
V V
DD DD
µ
PD70F3114
V , AV , RV
DD DDn DD
= 7.8 V ±0.3 V
V
PP
Output port
V , V , CV
SS3 SS
Remark n = 0, 1
616
CHAPTER 15 FLASH MEMORY (
Figure 15-13. Outline of Self-Programming Interface
Application program
Entry program
Self-programming
interface
Device internal processing
Flash-memory manipulation
Flash memory
) and that can be controlled by software is necessary on the application
PP
= 3.3 V ±0.3 V
REGIN
V
PP
10 kΩ
≥ 10 kΩ
, AV
SS SSn
User's Manual U15195EJ5V0UD
µ
PD70F3114)
RAM parameter
pin. To execute self-programming, a
PP
pin by manipulating a port is shown
PP
IC for power supply
OUTPUT INPUT
ON/OFF V
SS
V
IN