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R8C/18 Group, R8C/19 Group
Table 18.5
Flash Memory (Data flash Block A, Block B) Electrical Characteristics
Symbol
−
Program/erase endurance
−
Byte program time
(Program/erase endurance ≤ 1,000 times)
−
Byte program time
(Program/erase endurance > 1,000 times)
−
Block erase time
(Program/erase endurance ≤ 1,000 times)
−
Block erase time
(Program/erase endurance > 1,000 times)
t
Time delay from suspend request until
d(SR-SUS)
suspend
−
Interval from erase start/restart until
following suspend request
−
Interval from program start/restart until
following suspend request
−
Time from suspend until program/erase
restart
−
Program, erase voltage
−
Read voltage
−
Program, erase temperature
−
Data hold time
NOTES:
1. V
= 2.7 to 5.5 V at T
CC
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one. However, the same address must not be programmed more than once per erase operation (overwriting
prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. If emergency processing is required, a suspend request can be generated independent of this characteristic. In that case the
normal time delay to suspend can be applied to the request. However, we recommend that a suspend request with an interval
of less than 650 µ s is only used once because, if the suspend state continues, erasure cannot operate and the incidence of
erasure error rises.
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7. Customers desiring programming/erasure failure rate information should contact their Renesas technical support
representative.
-40 ° C for D version.
8.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Suspend request
(Maskable interrupt request)
Figure 18.2
Transition Time to Suspend
Rev.1.30
Apr 14, 2006
REJ09B0222-0130
Parameter
(2)
(9)
= -20 to 85 ° C / -40 to 85 ° C, unless otherwise specified.
opr
FMR46
Page 205 of 233
Conditions
Ambient temperature = 55 ° C
Fixed time (97 µs)
t
d(SR-SUS)
18. Electrical Characteristics
Standard
Min.
Typ.
Max.
−
−
(3)
10,000
−
50
400
−
−
65
−
0.2
9
−
−
0.3
−
−
97+CPU clock
× 6 cycles
−
−
650
−
−
0
−
−
3+CPU clock
× 4 cycles
−
2.7
5.5
−
2.7
5.5
−
(8)
85
-20
−
−
20
Clock-dependent
time
Access restart
Unit
times
µ s
µ s
s
s
µ s
µ s
ns
µ s
V
V
° C
year
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