Digi NS7520B-1-C36 Hardware Reference Manual page 133

BCLK
TS_
RW_
BE[3:0]
D[31:0]
CS[7:0]_
CAS3_(RAS_)
CAS2_(CAS_)
CAS1_(WE_)
A[13:0]
AMUX
TA_ {output}
TEA_(LAST_) {output}
TA_ {input}
TEA_(LAST_) {input}
Figure 12: SDRAM burst read
The precharge command is issued, when necessary, during the T1 phase of a
normal or burst read cycle. The precharge command is issued only when the
row selection for the NS7520 has changed since the last access. Each chip
select maintains a 14-bit register identifying the last row accessed.
Additional clock cycles are inserted between the precharge command and
the active command, depending on the WAIT configuration.
The active command is always issued after the precharge command, and
selects a newly activated row address. Additional clock cycles are inserted
between the active command and the read command, depending on the
WAIT configuration.
The read command is issued in either the T1 or TW states, depending on
whether a precharge command was required. The read command selects
the starting column address for the current burst read operation. Additional
read nop nop
One Valid Per Cy cle
w w w . d i g i e m b e d d e d . c o m
M e m o r y C o n t r o l l e r M o d u l e
nop bstop inhibit
1 2 1