LAPIS Semiconductor ML62Q1000 Series User Manual page 741

25.4.5.3 Programming to Specified Flash Memory Area
Figure 25-10 shows the flow diagram for programming to the specified flash memory area.
Initial setting command transmission (6)
Initial setting command transmission (4)
Code area programming data setting
Code area programming data setting
NO
NO
Initial setting command transmission (7)
Figure 25-10 Flow Diagram for Programming to Specified Flash Memory Area
[Note]
Ÿ
The programming process needs to be completed within 500ms. In the case of programming to multiple
addresses, the process from previous setting data to the next setting data or to the end of initial setting
command transmission (7) within 500ms.
FEUL62Q1000
Start programming
Setting for segment and address
Write command
NO
(higher 2 bytes)
(lower 2 bytes)
BUSY signal confirmation
rd
3 byte is 0x00?
YES
Write completed for
the target size?
YES
End
Enable the erase/program/verify using the commands.
Not required if it is already enabled.
Set the segment and address using the commands.
YES
Data area programming data setting
rd
If the 3 byte of BUSY signal confirmation
command is other than 0x00, it indicates the
erase or write is in progress.
Disable the erase/program/verify using the
commands.
Not required if it is already enabled.
ML62Q1000 Series User's Manual
Chapter 25 Flash Memory
rd
Set 0xFF in the 3 bytes.
25-27