Table of Contents
Advertisement
Item
Erase
Wait time after H'FF dummy
* 1
write
Wait time after EV bit clear
Wait time after SWE bit clear
Maximum erase count
Notes: *1 Make each time setting in accordance with the program or erase algorithm.
*2 Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
*3 Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
not include the erase verification time.)
*4 To specify the maximum programming time value (t P (max)) in the 128-byte
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
[In additional programming]
Programming counter (n)= 1 to 6:
*5 For the maximum erase time (t
wait time after E bit setting (t
To set the maximum erase time, the values of (t
the above formula.
Examples: When t
* 1
*1
* 1* 5
(max)), the following relationship applies between the
E
) and the maximum erase count (N):
se
t
(max) = Wait time after E bit setting (t
E
= 100 [ms], N = 12 times
se
When t
= 10 [ms], N = 120 times
se
Symbol
Min
Typ
t
2
2
sevr
t
4
4
cev
t
100
100
cswe
N
12
—
t
= 30 µs
sp30
t
= 200 µs
sp200
t
= 10 µs
sp10
) x maximum erase count (N)
se
) and (N) should be set so as to satisfy
se
Max
Unit
Test Condition
—
µs
—
µs
—
µs
120
Times
779
Advertisement
Table of Contents
