Hitachi H8S/2646 Hardware Manual page 1100

FLMCR1—Flash Memory Control Register 1
Bit 7
FWE
Initial value —*
Read/Write R
Erase-verify
0
1 Transition to erase-verify mode
Program Setup Bit
0 Program setup cleared
1
Program setup
[Setting condition]
When FWE = 1 and SWE = 1
Erase Setup Bit
0 Erase setup cleared
1
Erase setup
[Setting condition]
When FWE = 1 and SWE = 1
Software Write Enable Bit
0 Writes disabled
1
Writes enabled
[Setting condition]
When FWE = 1
Flash Write Enable Bit
0 When a low level is input to the FWE pin (hardware-protected state)
1
When a high level is input to the FWE pin
Note: * Determined by the state of the FWE pin.
1068
6 5
SWE ESU
0 0
R/W R/W
Erase
0 Erase mode cleared
1 Transition to erase mode
[Setting condition]
When FWE = 1, SWE = 1, and ESU = 1
Program-Verify
0 Program-verify mode cleared
1 Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Erase-verify mode cleared
[Setting condition]
When FWE = 1 and SWE = 1
H'FFA8
4 3
PSU EV PV
0 0
R/W R/W R/W
Program
0 Program mode cleared
1 Transition to program mode
[Setting condition]
When FWE = 1, SWE = 1, and PSU = 1
Flash Memory
2 1 0
E P
0 0 0
R/W R/W