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Page 40
Symbol
I
Quiescent Current
DDS
I
Input Leakage Current
IZ
I
Output Leakage Current
OZ
V
High Level Output Voltage
OH
V
Low Level Output Voltage
OL
V
High Level Input Voltage
IH
V
Low Level Input Voltage
IL
V
High Level Input Voltage
T+
V
Low Level Input Voltage
T-
V
Hysteresis Voltage
H1
R
Pull Down Resistance
PD
C
Input Pin Capacitance
I
C
Output Pin Capacitance
O
C
Bi-Directional Pin Capacitance
IO
S1D13505
X23A-A-001-14
Table 6-4: Electrical Characteristics for VDD = 3.3V typical
Parameter
Quiescent Conditions
VDD = min
I
OL
VDD = min
I
OL
CMOS level, V
CMOS level, V
CMOS Schmitt,
V
DD
CMOS Schmitt,
V
DD
CMOS Schmitt,
V
DD
V
I
Condition
-1
-1
=
-2mA (Type1),
V
DD
-4mA (Type2)
-6mA (Type3)
=
2mA (Type1),
4mA (Type2)
6mA (Type3)
= max
2.2
DD
= min
DD
= 3.3V
0.6
= 3.3V
0.1
= 3.3V
= V
90
DD
Epson Research and Development
Vancouver Design Center
Min
Typ
Max
290
1
1
- 0.3
0.3
0.8
2.4
180
360
12
12
12
Hardware Functional Specification
Issue Date: 01/02/02
Units
uA
A
A
V
V
V
V
V
V
V
k
pF
pF
pF
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