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8 ELECTRICAL CHARACTERISTICS
3) 2.0 V single power source
Item
Static current consumption
Input leakage current
Off-state leakage current
High-level output voltage
Low-level output voltage
High-level input voltage
Low-level input voltage
Positive trigger input voltage
Negative trigger input voltage
Hysteresis voltage
Pull-up resistor
Pull-down resistor
Input pin capacitance
Output pin capacitance
I/O pin capacitance
Note: See Appendix B for pin characteristics.
A-74
(Unless otherwise specified: V
Symbol
Condition
I
Static state, T
=85°C
DDS
j
I
LI
I
OZ
V
I
=-0.6mA (Type1), I
OH
OH
I
=-4mA (Type3), V
OH
V
I
=0.6mA (Type1), I
OL
OL
I
=4mA (Type3), V
OL
V
CMOS level, V
=Max.
IH
DD
V
CMOS level, V
=Min.
IL
DD
V
CMOS Schmitt
T+
V
CMOS Schmitt
T-
V
CMOS Schmitt
H
R
V
=0V
PU
I
R
V
=V
(ICEMD)
PD
I
DD
C
f=1MHz, V
=0V
I
DD
C
f=1MHz, V
=0V
O
DD
C
f=1MHz, V
=0V
IO
DD
EPSON
=V
=2V±0.2V, V
DDE
DD
=-2mA (Type2),
OH
=Min.
DD
=2mA (Type2),
OL
=Min.
DD
Other than DSIO
DSIO
=0V, Ta=-40°C to +85°C)
SS
Min.
Typ.
Max.
Unit
–
–
80
µA
-1
–
1
µA
-1
–
1
µA
V
–
–
V
DD
-0.2
–
–
0.2
V
1.6
–
–
V
–
–
0.3
V
0.4
–
1.6
V
0.3
–
1.4
V
0
–
–
V
120
480
1200
k
60
240
600
k
60
240
600
k
–
–
10
pF
–
–
10
pF
–
–
10
pF
S1C33L03 PRODUCT PART
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