Epson CMOS 32-Bit Single Chip Microcomputer S1C33L03 Technical Manual page 90

8 ELECTRICAL CHARACTERISTICS
3) 2.0 V single power source
Item
Static current consumption
Input leakage current
Off-state leakage current
High-level output voltage
Low-level output voltage
High-level input voltage
Low-level input voltage
Positive trigger input voltage
Negative trigger input voltage
Hysteresis voltage
Pull-up resistor
Pull-down resistor
Input pin capacitance
Output pin capacitance
I/O pin capacitance
Note: See Appendix B for pin characteristics.
A-74
(Unless otherwise specified: V
Symbol Condition
I
Static state, T =85°C
DDS
j
I
LI
I
OZ
V
I =-0.6mA (Type1), I
OH
OH
I =-4mA (Type3), V
OH
V
I =0.6mA (Type1), I
OL
OL
I =4mA (Type3), V
OL
V
CMOS level, V =Max.
IH
DD
V
CMOS level, V =Min.
IL
DD
V
CMOS Schmitt
T+
V
CMOS Schmitt
T-
V
CMOS Schmitt
H
R
V =0V
PU
I
R
V =V (ICEMD)
PD
I DD
C
f=1MHz, V =0V
I
DD
C
f=1MHz, V =0V
O
DD
C
f=1MHz, V =0V
IO
DD
EPSON
=V =2V±0.2V, V
DDE DD
=-2mA (Type2),
OH
=Min.
DD
=2mA (Type2),
OL
=Min.
DD
Other than DSIO
DSIO
=0V, Ta=-40°C to +85°C)
SS
Min. Typ. Max. Unit
– – 80 µA
-1 – 1 µA
-1 – 1 µA
V – – V
DD
-0.2
– – 0.2 V
1.6 – – V
– – 0.3 V
0.4 – 1.6 V
0.3 – 1.4 V
0 – – V
120 480 1200 k
60 240 600 k
60 240 600 k
– – 10 pF
– – 10 pF
– – 10 pF
S1C33L03 PRODUCT PART