Programming Procedure To The Internal Flash Memory - Mitsubishi Electric M32R Series User Manual

Mitsubishi 32-bit risc single-chip microcomputers

Table of Contents

6.5.3 Programming Procedure to the Internal Flash Memory

To write to the internal flash memory, set the device's operation mode to enter flash E/W enable

mode first and then use the flash write program that has already been transferred from the flash

memory into the internal RAM.

In flash E/W enable mode, no data can be read out from the internal flash memory as in normal

mode, so you cannot execute a program that exists in the internal flash memory. Therefore, the

flash write program must be prepared in the internal RAM before entering flash E/W enable mode.

(Once you've entered flash E/W enable mode, you cannot use any command except flash

commands to access the flash memory.)

To access the internal flash memory in flash memory E/W enable mode, issue commands for the

internal flash memory address to be operated on. The table below lists the commands that can be

issued in flash memory E/W enable mode.

Note : During flash E/W enable mode, the flash memory cannot be accessed for read or write

Table 6.5.2 Commands in Flash Memory E/W Enable Mode

Command Name

Read Array command

Page Program command

Lock Bit Program command

Block Erase command

Erase All Unlock Block command

Read Status Register command

Clear Status Register command

Read Lock Bit Status command

Verify command (Note)

Note: This command is used in conjunction with Lock Bit Program, Block Erase, and Erase All Unlock Block operations.

(1) Read Array command

Read mode is entered by writing command data H'FFFF to any address of the internal flash

memory. Then read the flash memory address you want to read out, and the content of that

address will be read out.

Before exiting flash E/W enable mode, always be sure to execute the Read Array command.

6.5 Programming of the Internal Flash Memory

Issued Command Data

INTERNAL MEMORY