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Note 1: Start writing from the beginning of a 256-byte boundary of the flash memory (lower address H'00).
Note 2: When Program operation starts, you have the Read Status Register command automatically
entered. (You do not need to enter the Read Status Register command until you issue another
command.)
Note 3: Examine the Flash Status Register 2 ERESE (Auto Erase operating condition), WRERR1
(Program operating condition 1), and WRERR2 (Program operating condition 2) bits to check for
program error.
Figure 6.5.11 Page Program
6.5 Programming of the Internal Flash Memory
START
Write Page Program command (H'4141)
to any address of internal flash memory.
Write data to the internal flash memory
address to which you want to write. (Note 1)
Increment the previous write address by 2
and write the next data to the new address.
NO
Programmed
for one page ?
YES
Written to the internal flash memory by
Page Program (Note 2)
1 µs wait
(by hardware timer or software timer)
FSTAT bit = 1
YES
Read any address of internal flash memory
to check for program error. (Note 3)
NO
Last address ?
YES
END
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INTERNAL MEMORY
NO
TIME OUT ?
0.5s
Forcibly terminated
NO
YES
Ver.0.10
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