Flash Memory Characteristics - Motorola MC68HC908AB32 Technical Data Manual

23.13 FLASH Memory Characteristics

FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
Notes:
1. f is defined as the frequency range for which the FLASH memory can be read.
Read
2. If the page erase time is longer than t
FLASH memory.
3. If the mass erase time is longer than t
the FLASH memory.
4. t is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump,
rcv
by clearing HVEN to logic 0.
5. t is defined as the cumulative high voltage programming time to the same row before next erase.
HV
t must satisfy this condition: t
HV
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
this many erase / program cycles.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
this many erase / program cycles.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
time specified.
MC68HC908AB32 Rev. 1.0
—
MOTOROLA
Characteristic
(6)
(7)
(8)
(Min), there is no erase-disturb, but it reduces the endurance of the
Erase
MErase
+ t + t
nvs nvh pgs
Electrical Specifications
Symbol
—
(1)
f
Read
(2)
t
Erase
(3)
t
MErase
t
nvs
t
nvh
t
nvhl
t
pgs
t
PROG
(4)
t
rcv
(5)
t
HV
—
—
—
(Min), there is no erase-disturb, but it reduces the endurance of
×
64) ≤ t
+ (t max.
PROG HV
Electrical Specifications

FLASH Memory Characteristics

Min Max Unit
1 — MHz
32k 8.4M Hz
1 — ms
4 — ms
10 —
5 —
100 —
5 —
30 40
1 —
— 4 ms
10,000 — Cycles
10,000 — Cycles
10 — Years
Technical Data
µs
µs
µs
µs
µs
µs
385