Eeprom And Memory Characteristics - Motorola MC68HC908AB32 Technical Data Manual

Hcmos microcontroller unit
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Characteristic
Low-voltage inhibit reset/recover hysteresis – target
(7)
POR rearm voltage
(8)
POR reset voltage
POR rise time ramp rate
Notes:
±
1. V
= 5.0 Vdc
10%, V
DD
2. Typical values reflect average measurements at midpoint of voltage range, 25 °C only.
3. Run (operating) I
measured using external square wave clock source (f
DD
loads. Less than 100 pF on all outputs. C
affects run I
. Measured with all modules enabled.
DD
4. Wait I
measured using external square wave clock source (f
DD
than 100 pF on all outputs. C
I
. Measured with PLL and LVI enabled.
DD
5. Stop I
is measured with OSC1 = V
DD
6. Pullups are disabled. Port B leakage is specified in
7. Maximum is highest voltage that POR is guaranteed.
8. Maximum is highest voltage that POR is possible.
9. If minimum V
is not reached before the internal POR reset is released, RST must be driven low externally until minimum
DD
V
is reached.
DD

23.7 EEPROM and Memory Characteristics

RAM data retention voltage
EEPROM programming time per byte
EEPROM erasing time per byte
EEPROM erasing time per block
EEPROM erasing time per bulk
EEPROM programming voltage discharge period
Number of programming operations to the same EEPROM
(1)
byte before erase
EEPROM write/erase cycles at 10ms write time (85°C)
EEPROM data retention after 10,000 write/erase cycles
Notes:
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must
be erased before it can be programmed again.
MC68HC908AB32
Rev. 1.0
MOTOROLA
(1)
(9)
= 0 Vdc, T
= T
to T
SS
A
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly affects wait
L
.
SS
Characteristic
Electrical Specifications
Symbol
H
LVI
V
POR
V
PORRST
R
POR
, unless otherwise noted
H
BUS
= 8.4 MHz). All inputs 0.2 V from rail. No dc loads. Less
BUS
23.10 ADC
Characteristics.
Symbol
V
RDR
t
EEPGM
t
EBYTE
t
EBLOCK
t
EBULK
t
EEFPV
Electrical Specifications

EEPROM and Memory Characteristics

(2)
Min
Typ
100
150
0
0
0.02
= 8.4 MHz). All inputs 0.2 V from rail. No dc
Min
Max
0.7
10
10
10
10
100
8
10,000
10
Max
Unit
mV
200
mV
800
mV
V/ms
Unit
V
ms
ms
ms
ms
µs
Cycles
Years
Technical Data
377

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