Ss = 0V, Ta = 25°C, R; Crystal Resonator = Ma-406: Manufactured By Epson Toyocom; Dd = 1.8 To 3.6V; 150W, C L = 10Pf) - Epson S1C17624 Technical Manual

Cmos 16-bit single chip microcontroller
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Current consumption-temperature characteristic during execution with iOSC + clock gear
IOSC = internal oscillator, OSC1 = OFF, OSC3 = OFF, PCKEN[1:0] = 0x3, VD1MD = 0, Typ. value
1200
1000
800
600
400
200
0
-50
-25
0
<S1C17624/604/622>
29.4
Oscillation Characteristics
Oscillation characteristics change depending on conditions (board pattern, components used, etc.). Use the follow-
ing characteristics as reference values. See Appendix E for recommended resonators.
OSC1 crystal oscillation
Unless otherwise specified: V
DD
item
*1
Oscillation start time
Built-in drain capacitance
*1 Crystal resonator = MC-146: manufactured by EPSON TOYOCOM (R
OSC3 crystal oscillation
Unless otherwise specified: V
DD
item
*1
Oscillation start time
*1 Crystal resonator = MA-406: manufactured by EPSON TOYOCOM (R
OSC3 ceramic oscillation
Unless otherwise specified: V
DD
item
*1
Oscillation start time
*1 Ceramic resonator = CSTR4M00G53095-R0: manufactured by Murata Manufacturing Co., Ltd (C
iOSC oscillation
Unless otherwise specified: V
DD
item
Oscillation start time
Oscillation frequency
S1C17624/604/622/602/621 TeChniCal Manual
Gear ratio
1/1
1/2
1/4
1/8
25
50
75
100
Ta [°C]
= 1.8 to 3.6V, V
= 0V, Ta = 25°C, C
SS
Symbol
t
sta
C
In case of the chip
D1
= 1.8 to 3.6V, V
= 0V, Ta = 25°C, R
SS
Symbol
t
sta
= 1.8 to 3.6V, V
= 0V, Ta = 25°C, R
SS
Symbol
t
sta
= 1.8 to 3.6V, V
= 0V, Ta = -25 to 70°C
SS
Symbol
t
sta
f
Normal operation mode
IOSC
Seiko epson Corporation
29 eleCTRiCal ChaRaCTeRiSTiCS
1200
1000
800
600
400
200
0
-50
-25
0
<S1C17602/621>
= 25pF external, C
= built-in, R
G1
D1
Condition
Min.
= 65kW Max., C
= 12.5pF)
1
L
= 1MW
F3
Condition
Min.
= 150W, C
= 10pF)
1
L
= 1MW
F3
Condition
Min.
Condition
Min.
2.16
Gear ratio
1/1
1/2
1/4
1/8
25
50
75
100
Ta [°C]
= built-in
f1
Typ.
Max.
unit
3
s
10
pF
Typ.
Max.
unit
20
ms
Typ.
Max.
unit
1
ms
= C
= 15pF built-in)
G3
D3
Typ.
Max.
unit
5
µs
2.70
3.24
MHz
29-5

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