Flash Mass Erase Operation - Motorola MC68HC908GP32 Technical Data Manual

FLASH Memory
NOTE:

11.6 FLASH Mass Erase Operation

NOTE:
Technical Data
168
Freescale Semiconductor, Inc.
9. Clear the HVEN bit.
10. After a time, t
rcv
read mode.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
Use this step-by-step procedure to erase entire FLASH memory to read
as logic 1:
1. Set both the ERASE bit, and the MASS bit in the FLASH control
register.
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address* within the FLASH memory
address range.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
10. After a time, t
rcv
read mode.
* When in Monitor mode, with security sequence failed
block protect register instead of any FLASH address.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
FLASH Memory
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(typ. 1µs), the memory can be accessed again in
(min. 10µs)
nvs
(min. 4ms)
MErase
(min. 100µs)
nvhl
(min. 1µs), the memory can be accessed again in
(see 15.5
MC68HC908GP32
Security), write to the FLASH
MC68HC08GP32 Rev. 6
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