Flash Memory Characteristics; Table 20.8 Flash Memory Characteristics - Renesas H8 Series Hardware Manual

Section 20 Electrical Characteristics
20.2.6

Flash Memory Characteristics

Table 20.8 Flash Memory Characteristics

V = 3.0 to 5.5 V, V
CC SS
Item
Programming time (per 128 bytes)*
Erase time (per block)*
Reprogramming count
Programming Wait time after SWE
bit setting*
Wait time after PSU
bit setting*
Wait time after P bit
setting*
Wait time after P bit clear*
Wait time after PSU
bit clear*
Wait time after PV
bit setting*
Wait time after
dummy write*
Wait time after PV bit clear*
Wait time after SWE
bit clear*
Maximum programming
1
count*
Rev. 1.00 Aug. 28, 2006 Page 332 of 400
REJ09B0268-0100
= 0.0 V, T = –20 to +75°C, unless otherwise indicated.
a
Symbol Condition
1 2 4
* * t
1 3 6
* * t
N
x
1
y
1
z1
1 4
*
z2
z3
α
1
β
1
γ
1
ε
1
η
1
θ
1
N
4 5
* *
Test
P
E
WEC
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional-
programming
Values
Min Typ Max
— 7 200
— 100 1200
1000 10000 —
1 — —
50 — —
28 30 32
198 200 202
8 10 12
5 — —
5 — —
4 — —
2 — —
2 — —
100 — —
— — 1000
Unit
ms
ms
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times