Register Descriptions; Flash Memory Control Register 1 (Flmcr1) - Renesas H8 Series Hardware Manual

7.2

Register Descriptions

The flash memory has the following registers.

• Flash memory control register 1 (FLMCR1)

• Flash memory control register 2 (FLMCR2)
• Erase block register 1 (EBR1)
• Flash memory power control register (FLPWCR)
• Flash memory enable register (FENR)
7.2.1 Flash Memory Control Register 1 (FLMCR1)
FLMCR1 is a register that makes the flash memory change to program mode, program-verify
mode, erase mode, or erase-verify mode. For details on register setting, refer to section 7.4, Flash
Memory Programming/Erasing.
Bit Bit Name
7 —
6 SWE
5 ESU
4 PSU
3 EV
Initial
Value R/W Description
0 — Reserved
This bit is always read as 0.
0 R/W Software Write Enable
When this bit is set to 1, flash memory
programming/erasing is enabled. When this bit is cleared
to 0, other FLMCR1 register bits and all EBR1 bits cannot
be set.
0 R/W Erase Setup
When this bit is set to 1, the flash memory changes to the
erase setup state. When it is cleared to 0, the erase setup
state is cancelled. Set this bit to 1 before setting the E bit
to 1 in FLMCR1.
0 R/W Program Setup
When this bit is set to 1, the flash memory changes to the
program setup state. When it is cleared to 0, the program
setup state is cancelled. Set this bit to 1 before setting the
P bit in FLMCR1.
0 R/W Erase-Verify
When this bit is set to 1, the flash memory changes to
erase-verify mode. When it is cleared to 0, erase-verify
mode is cancelled.
Rev. 1.00 Aug. 28, 2006 Page 99 of 400
REJ09B0268-0100
Section 7 ROM