Dram (70Ns - Epson S1C33210 Technical Manual

A.1 DRAM (70ns)
DRAM interface setup examples – 70ns
Operating RAS precharge
frequency
20MHz
25MHz
33MHz
DRAM interface timing – 70ns
DRAM interface
Parameter
<Common parameters>
Random read/random write cycle time
#RAS precharge time
#RAS pulse width
#CAS pulse width
Row address setup time
Row address hold time
Column address setup time
#RAS #CAS delay time
#RAS column address delay time
<Read-cycle parameters>
#RAS access time
#CAS access time
Address access time
#OE access time
Output buffer turn-off time
<Write-cycle parameters>
Data input hold time
<Fast-page mode>
Fast-page mode cycle time
Fast-page mode #CAS precharge time
Access time after #CAS precharge
<Refresh cycle>
#CAS setup time
#CAS hold time
#RAS precharge #CAS hold time
#RAS pulse width (only in refresh cycle)
S1C33210 PRODUCT PART
APPENDIX A <REFERENCE> EXTERNAL DEVICE INTERFACE TIMINGS
RAS cycle
cycle
2 1
2 1
2 2
Unit: ns
Symbol Min.
t
130
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
RCD
t
RAD
t
RAC
t
CAC
t
AA
t
OAC
t
OFF
t
DH
t
PC
t
CP
t
ACP
t
CSR
t
CHR
t
PPC
t
RAS
CAS cycle
2
2
3
33MHz
Max. Cycle Time
– 7 210
50 – 2
70 10000 5 150
20 10000 2.5
0 – 0.5
10 – 1.5
0 – 0.5
20 – 2.0
15 – 1.5
– 70 4.5 135
– 20 2.5
– 35 3.0
– 20 4.5 135
0 20 2
15 – 2.5
45 – 3.0
10 – 0.5
– 40 3.0
10 – 1.0
10 – 2.5
10 – 1.0
70 10000 3.0
EPSON
Refresh RAS pulse
Refresh RPC delay
width
2
2
3
25MHz
Cycle Time Cycle
5 200
60 2 80
3 120
75 1.5 60
15 0.5 20
45 0.5 20
15 0.5 20
60 1.0 40
45 0.5 20
2.5 100
75 1.5 60
90 2.0 80
2.5 100
60 2 80
75 1.5 60
90 2.0 80
15 0.5 20
90 2.0 80
30 1.0 40
75 1.5 60
30 1.0 40
90 2.0 80
1
1
1
20MHz
Time
5 250
2 100
3 150
1.5 75
0.5 25
0.5 25
0.5 25
1.0 50
0.5 25
2.5 125
1.5 75
2.0 100
2.5 125
2 100
1.5 75
2.0 100
0.5 25
2.0 100
1.0 50
1.5 75
1.0 50
2.0 100
A-93