NEC V850E/MA1 User Manual page 540

16.7.18 Self-programming library
V850 Series User's Manual Flash Memory Self Programming Library is available for reference when executing
self-programming.
In this manual, the library uses the self-programming interface of the V850 Series and can be used in C as a utility
and as part of the application program. To use the library, thoroughly evaluate it on the application system.
(1) Functional outline
Figure 16-12 outlines the function of the self-programming library. In this figure, a rewriting module is located
in area 0 and the data in area 1 is rewritten or erased.
The rewriting module is a user program to rewrite the flash memory. The other areas can be also rewritten by
using the flash functions included in this self-programming library. The flash functions expand the entry
program in the external memory or internal RAM and call the device internal processing.
When using the self-programming library, make sure that the hardware conditions, such as the write voltage,
and the software conditions, such as interrupts, are satisfied.
Figure 16-12. Functional Outline of Self-Programming Library
Flash memory
Area 1
Rewriting module
Area 0
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FLASH MEMORY ( µ µ µ µ PD70F3107A)
CHAPTER 16
Erase/write
Rewriting module
Flash rewriting program
Self-programming
User's Manual U14359EJ4V0UM
Flash function
Flash environment
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