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17.11.9 PROM Mode Transition Time
Commands cannot be accepted during the oscillation stabilization period or the PROM mode setup
period. After the PROM mode setup time, a transition is made to memory read mode.
Table 17-23 Command Wait State Transition Time Specifications
Item
Standby release (oscillation
stabilization time)
PROM mode setup time
V
hold time
CC
V
CC
RES
FWE
Note: Except in auto-program mode and auto-erase mode, drive the FWE input pin low.
Figure 17-29 Oscillation Stabilization Time, Writer Mode Setup Time, and Power Supply
17.11.10 Notes On Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
• When performing programming using writer mode on a chip that has been programmed/erased
in an on-board programming mode, auto-erasing is recommended before carrying out auto-
programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
2. Auto-programming should be performed once only on the same address block.
Additional programming cannot be carried out on address blocks that have already
been programmed.
592
Symbol
t
osc1
t
bmv
t
dwn
Memory read
mode
Command
t
t
wait state
osc1
bmv
Min
Max
30
—
10
—
0
—
Auto-program mode
Auto-erase mode
Fall Sequence
Unit
Notes
ms
ms
ms
Command
wait state
Normal/
abnormal end
t
identification
dwn
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