Texas Instruments MSP430x1xx User Manual page 141

Block Write
The block write can be used to accelerate the flash write process when many
sequential bytes or words need to be programmed. The flash programming
voltage remains on for the duration of writing the 64-byte block. The
cumulative programming time t
a block write.
A block write cannot be initiated from within flash memory. The block write
must be initiated from RAM only. The BUSY bit remains set throughout the
duration of the block write. The WAIT bit must be checked between writing
each byte or word in the block. When WAIT is set the next byte or word of the
block can be written. When writing successive blocks, the BLKWRT bit must
be cleared after the current block is complete. BLKWRT can be set initiating
the next block write after the required flash recovery time given by t
is cleared following each block write completion indicating the next block can
be written. Figure 5−10 shows the block write timing.
Figure 5−10. Block-Write Cycle Timing
BLKWRT bit
Write to Flash e.g., MOV #123h, &Flash
Generate
Programming Voltage
Cumulative Programming Time t CPT ∼=< 4ms, V CC Current Consumption is Increased
BUSY
t = 30/f
Block, 0
WAIT
Programming Operation Active
t = 21/f
FTG Block 1-63
Flash Memory Operation
must not be exceeded for any block during
CPT
t = 21/f
FTG Block, 1-63 FTG
Flash Memory Controller
. BUSY
End
Remove
Programming Voltage
t = 6/f
End FTG
5-11