Table of Contents
Advertisement
Flash Memory Introduction
5.1 Flash Memory Introduction
The MSP430 flash memory is bit-, byte-, and word-addressable and
programmable. The flash memory module has an integrated controller that
controls programming and erase operations. The controller has three
registers, a timing generator, and a voltage generator to supply program and
erase voltages.
MSP430 flash memory features include:
-
-
-
-
The block diagram of the flash memory and controller is shown in Figure 5−1.
Note: Minimum V
The minimum V
If V
will be unpredictable.
Figure 5−1. Flash Memory Module Block Diagram
5-2
Flash Memory Controller
Internal programming voltage generation
Bit, byte or word programmable
Ultralow-power operation
Segment erase and mass erase
During Flash Write or Erase
CC
voltage during a flash write or erase operation is 2.7 V.
CC
falls below 2.7 V during a write or erase, the result of the write or erase
CC
MAB
FCTL1
Address Latch
FCTL2
Enable
Address
Latch
FCTL3
Timing
Generator
Enable
Data Latch
Programming
Voltage
Generator
MDB
Data Latch
Flash
Memory
Array
Advertisement
Table of Contents
