Differences Between Mask Rom Version And Eprom Version - Panasonic F77G User Manual

Chapter 18 Flash EEPROM
18-1-2 Differences between Mask ROM version and EPROM
version
Table 18-1-1 shows differences between 8-bit microcontroller MN101C77C (Mask ROM version),
MN101CF77G (EPROM version) .
Table 18-1-1 Differences between Mask ROM version and EPROM version
Operating temperature
Operating Voltage
Pin
Current consumption
Oscillation characteristics
Noise characteristics
*1 Apply +5 V during Flash EEPROM programming, and apply the same (V
other operations.
XVIII - 4
Overview
MN101C77C
(Mask ROM Version)
o o
- 40 C to +85 C
2.5 V to 3.6 V (100ns / 20MHz)
2.1 V to 3.6 V (200ns / 10MHz)
1.8 V to 3.6 V (500ns / 4MHz)
Pin No. 5: NC
Current consumption of Flash EEPROM versions are larger than
that of the Mask ROM versions, as it features voltage boosting. The
difference is larger in SLOW and HALT mode.
Matching evaluation of each version is necessary when these
versions are rotated for mass production.
Noise evaluation of each version is necessary when these versions
are rotated for mass production.
MN101CF77G
(Flash EEPROM Version)
o o
- 40 C to +85 C
2.7 V to 3.6 V (100ns / 20MHz)
Pin No. 5: VPP *1
) potential during
DD