Intel 855GME Design Manual page 95

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®
Intel
855GME Chipset and Intel
®
Table 21. Intel
Pentium
Option
Low-Frequency Decoupling (Polymer-Covered
1
2
(Polymer-Covered Aluminum – SP Cap, A0 Cap)
3
Low-Frequency Decoupling (1206 MLCC, >= X5R)
Mid-Frequency Decoupling (0612 MLCC, >= X5R)
Low-Frequency Decoupling (Polymer-Covered
4
Mid-Frequency Decoupling (0805 MLCC>= X5R)
† Option 4 is to be used with small footprint (100 mm
Compared to options 1-3, option 4 represents cost- and space-optimized decoupling solutions that
provide a competitive level of VRM performance and efficiency. Option 4 is the recommended
V
decoupling solution for Intel Pentium M/Celeron M processor-based systems and offers
CC-CORE
the best balance of performance, cost, and motherboard surface area requirements.
An example layout implementation of the recommended option 4 is illustrated in
Figure
45,
Figure
decoupling capacitors are placed on the secondary side and connected to the AF signal row of the
Intel Pentium M/Celeron M processor pins with a solid V
the mid-frequency 0805 ceramic mecoupling capacitors that are in between. To minimize the
inductance of the SP capacitor connection for the layout style shown, the sense resistors' VRM
feed is on the positive terminal side of the SP capacitors. In this case each of the SP capacitors is
connected to two pairs of V
more details. When the VRM sense resistors connect from the negative side of the SP capacitors,
two pairs of V
capacitors.
Thirty-two 10 µF, 0805 capacitors are placed on the secondary side (Layer 8) while the remaining
three are placed on the primary side (Layer 1). Six of the 10-µF capacitors are placed outside the
socket outline with a 90-mil (or closer) pitch (as shown in
either side for the four 220 µF bulk capacitors (three to the left and three to the right of the SP
capacitors). Each of these six 0805 capacitors have a pair of V
next to both positive and negative terminals of the capacitors. The stitching vias connect to the
internal ground and V
®
®
®
M/Celeron
M Processor V
Description
Tantalum – POSCAP, Neocap, KO Cap)
Mid-Frequency Decoupling
(0612 MLCC, >= X5R)
Low-Frequency Decoupling
(1206 MLCC, >= X5R)
Mid-Frequency Decoupling
(0612 MLCC, >= X5R)
Low-Frequency Decoupling
Aluminum – SP CAP, AO Cap)
46, and
Figure
47.
Figure 44
/GND vias on the positive terminal. Refer to
CC-CORE
/GND vias are needed on both positive and negative terminals of the SP
CC-CORE
planes, respectively.
CC-CORE
January 2007
6300ESB ICH Embedded Platform Design Guide
Decoupling Guidelines
CC-CORE
Cap
12 x 150 µF
15 x 2.2 µF
40 x 10 µF
15 x 2.2 µF
5 x 330 µF
25 x 10 µF
15 x 2.2 µF
4 x 220 μ F
35 x 10 μ F
2
or less) 0.36 µH ± 20% inductors.
and
Figure 45
show how the four, low-frequency SP
flood area along with eight of
CC-CORE
Figure
45) and are divided evenly on
CC-CORE
ESR
ESL
36 m Ω (typ)/12
2.5 nH/12
5 m Ω (typ)/15
0.2 nH/15
5 m Ω (typ)/40
1.2 nH/40
5 m Ω (typ)/15
0.2 nH/15
15 m Ω (max)/5
3.5 nH/5
5 m Ω (typ)/25
1.2 nH/25
5 m Ω (typ)/15
0.2 nH/15
12 m Ω (max)/4
3.5 nH/4
5 m Ω (typ)/35
0.6 nH/35
Figure
44,
Figure 45
for
and GND stitching vias
95

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