Renesas H8 Series Hardware Manual page 360

Section 20 Electrical Characteristics
Item
Erase Wait time after SWE
bit setting*
Wait time after ESU
bit setting*
Wait time after E bit
setting*
Wait time after E bit
1
clear*
Wait time after ESU
bit clear*
Wait time after EV
bit setting*
Wait time after
dummy write*
Wait time after EV
bit clear*
Wait time after SWE
bit clear*
Maximum erase
1
count*
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
2. The programming time for 64 bytes. (Indicates the total time for which the P bit in flash
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
3. The time required to erase one block. (Indicates the time for which the E bit in flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4. Programming time maximum value (t
maximum programming count (N)
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
Programming count (n)
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
6. Erase time maximum value (t
erase count (N)
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
does not exceed the erase time maximum value (t
Rev. 3.00 Sep. 14, 2006 Page 330 of 408
REJ09B0105-0300
Symbol
x
1
y
1
z
1 6
*
α
β
1
γ
1
ε
1
η
1
θ
1
N
6 7
* *
z1 = 30 µs
z2 = 200 µs
(max.)) = wait time after E bit setting (z) × maximum
E
Test
Condition Min.
1
100
10
10
10
20
2
4
100
—
(max.)) = wait time after P bit setting (z) ×
P
(max.)).
E
Values
Typ. Max. Unit
— — µs
— — µs
— 100 ms
— — µs
— — µs
— — µs
— — µs
— — µs
— — µs
— 120 Times
(max.)).
P