Functional Outline; Table 24-1: Rewrite Method - NEC V850E/PH2 User Manual

24.3 Functional Outline

The internal flash memory of the V850E/PH2 can be rewritten by using the rewrite function of the dedi-
cated flash programmer, regardless of whether the V850E/PH2 has already been mounted on the tar-
get system or not (off-board/on-board programming).
In addition, different functions are implemented to protect unwanted Flash access via the programmer
interface and to protect the boot area from any unwanted modification
The rewrite function using the user program (self programming) is ideal for an application where it is
assumed that the program is changed or extended during or after production/shipment of the target
system. Interrupt servicing is supported during self programming, so that the flash memory can be
rewritten under various conditions, such as while communicating with an external device.
Rewrite Method
Off-board programming
On-board programming
Self-programming
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Chapter 24 Flash Memory

Table 24-1: Rewrite Method

Functional Outline
Flash memory can be rewritten before the device is
mounted on the target system, by using a dedicated
flash programmer and a dedicated program adapter
board.
Flash memory can be rewritten after the device is
mounted on the target system, by using a dedicated
flash programmer.
Flash memory can be rewritten by executing a user
program that has been written to the flash memory in
advance by means of off-board/on-board programming.
(During self-programming, instructions cannot be
fetched from or data access cannot be made to the
internal flash memory area. Therefore, the rewrite
program must be transferred to the internal RAM or
external memory in advance).
parts of the self-programming program
User's Manual U16580EE3V1UD00
Operation Mode
Flash memory
programming mode
Normal operation mode