Usb 2.0 Esd Protection Diode Vendors; Layout Example Of Usb 2.0 With Esd Diode Array - Intel Quark SoC X1000 Design Manual

Figure 84.

Layout Example of USB 2.0 with ESD Diode Array

Using ESD protection devices with higher parasitic capacitance would impact the
USB2.0 signal quality and thus limit the routing solution space of USB.
Note: Further ESD information is detailed in the high speed USB Platform Design Guides
available at www.usb.org/developers/docs.html
Recommended characteristics of an ideal ESD Protection Diode for USB2.0 are:
• Able to withstand at least 8kV of ESD strikes, complying to IEC 61000-4-2
standard.
• Low Capacitance, <2pF to minimize signal distortion at high speed data rate.
• Fast response time to protect from the fast rise time of ESD surge pulses.
• Low Leakage Current to minimize static power consumption.
• Integrated and reduced package dimension for better real estate and smaller
parasitic package effect.
• High reliability -Robustness to drive and absorb repetitive ESD conditions without
damage.
18.3.2

USB 2.0 ESD Protection Diode Vendors

ESD suppression is always recommended by Intel. However Intel does not recommend
a specific part/device or circuit for ESD suppression because each solution is board/
chassis/usage model specific.The following vendors manufacture ESD protection Diode
for USB2.0 which conform to the IEC 61000-4-2 standard. Please contact ESD
protection device vendors for more specific details on devices availability, packaging
option, how to place and optimize ESD, and datasheet.
®
Intel Quark™ SoC X1000
PDG
136
Close To Port
or Connector
USBP
USBN
Diode
Array
®
Intel Quark™ SoC X1000—Electrostatic Discharge (ESD)
Common
Mode Choke
June 2014
Order Number: 330258-002US