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22.
Flash Memory Operation
22.1
Features
Flash memory configuration units ares described as "block" and "page".
・ Page
・ Block
Write operation is performed per page. The write time per page is 1.25ms. (Typ.)
Erase is performed per block (auto block erase command use) or performed on entire flash memory (use
of auto chip erase command). Erase time varies on commands. If auto block command is used, the erase
time will be 0.1 sec per block (Typ.). If the auto chip erase command is used to erase entire area, the time
will be 0.2 sec (Typ.).
In addition, the protect function can be used per block. For detail of the protect function, refer to "22.1.5 Pro-
tect/Security Function".
22.1.2
Function
Flash memory built-in this device is generally compliant with the JEDEC standards except for some specif-
ic functions. Therefore, if a user is currently using a flash memory as an external memory, it is easy to imple-
ment the functions into this device. Furthermore, to provide easy write or erase operation, this product con-
tains a dedicated circuit to perform write or chip erase automatically.
・Automatic programming
・Automatic chip erase
・Automatic block erase
・Data polling/toggle bit
22.1.3
Operation Mode
22.1.3.1
mal mode and user boot mode. Figure 22-3 shows the mode transition.
2019-02-06
One page is 32 words. Same address [31:7] is used in a page. First address of the group is [6:0]
= 0 and the last address of the group is [6:0] = 0x7F.
One block is 32KB and flash memory is consists of four(128KB) or two(64KB) blocks.
JEDEC compliant functions
Mode Description
This device provides the single chip mode and single boot mode. The single chip mode contains the nor-
Modified, added, or deleted functions
<Modified> Block write/erase protect (only software protection is supported)
<Deleted> Erase resume - suspend function
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TMPM3V6/M3V4
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