Toshiba TLCS-900/H1 Series Manual page 234

Writing ECC to NAND Flash
; ***** Write dummy data & ECC *****
;
ldw
ldw
;
ldw
;
ldw
;
ldw
;
ldw
;
;
; The write operation is repeated four times to write 2112 bytes.
Executing page program
; ***** Set auto page program*****
;
ldw
ldw
ldw
;
; Wait set up time (from Busy to Ready)
;
;
Note: In case of LB type NANDF, programming page size is normally each 2112 bytes and ECC calculation is
processed each 518 (512) bytes. Please take care of programming flow. In details, refer the NANDF memory
specifications.
Reading status
; ***** Read status*****
;
ldw
ldw
ldw
ldw
(ndfmcr0),5088h ; ECC circuit disable, data write mode
(ndfdtr0),xxxxh ; Redundancy area data write
Write to 207-206hex address:
(ndfdtr1),xxxxh ; Redundancy area data write
Write to 209-208hex address:
(ndfdtr0),xxxxh ; Redundancy area data write
Write to 20B-20Ahex address:
(ndfdtr1),xxxxh ; Redundancy area data write
Write to 20D-20Chex address:
(ndfdtr0),xxxxh ; Redundancy area data write
Write to 20F-20Ehex address:
(ndfmcr0),50A8h ; WE enable, CLE enable
(ndfdtr0),0010h ; Auto page program command
(ndfmcr0),5008h ; WE disable, CLE disable
1. Flag polling
2. Interrupt
(ndfmcr0),50A8h ; WE enable, CLE enable
(ndfdtr0),0070h ; Status read command
(ndfmcr0),5008h ; WE disable, CLE disable
xxxx,(ndfdtr0) ; Status read
92CF30-232
TMP92CF30
> D79-64
> D63-48
> D47-32
> D31-16
> D15-0
2009-06-12