Figure 417. Nand/Pc Card Controller Timing For Common Memory Access; Nand Flash Operations - ST STM32F205 series Reference Manual

RM0033

Figure 417. NAND/PC Card controller timing for common memory access

HCLK
A[25:0]
NCEx
High
NREG,
NIOW,
NIOR
NWE,
NOE (1)
write_data
read_data
1. NOE remains high (inactive) during write access. NWE remains high (inactive) during read access.
2. For write accesses, the hold phase delay is (MEMHOLD) x HCLK cycles, while it is (MEMHOLD + 2) x
HCLK cycles for read accesses.
31.6.4

NAND Flash operations

The command latch enable (CLE) and address latch enable (ALE) signals of the NAND
Flash device are driven by some address signals of the FSMC controller. This means that to
send a command or an address to the NAND Flash memory, the CPU has to perform a write
to a certain address in its memory space.
A typical page read operation from the NAND Flash device is as follows:
1. Program and enable the corresponding memory bank by configuring the FSMC_PCRx
and FSMC_PMEMx (and for some devices, FSMC_PATTx, see
registers according to the characteristics of the NAND Flash (PWID bits for the databus
width of the NAND Flash, PTYP = 1, PWAITEN = 0 or 1 as needed, see
memory space timing register 2..4 (FSMC_PMEM2..4)
2. The CPU performs a byte write in the common memory space, with data byte equal to
one Flash command byte (for example 0x00 for Samsung NAND Flash devices). The
CLE input of the NAND Flash is active during the write strobe (low pulse on NWE), thus
the written byte is interpreted as a command by the NAND Flash. Once the command
is latched by the NAND Flash device, it does not need to be written for the following
page read operations.
3. The CPU can send the start address (STARTAD) for a read operation by writing the
required bytes (for example four bytes or three for smaller capacity devices),
STARTAD[7:0], STARTAD[15:8], STARTAD[23:16] and finally STARTAD[25:24] for
64 Mb x 8 bit NAND Flash) in the common memory or attribute space. The ALE input of
the NAND Flash device is active during the write strobe (low pulse on NWE), thus the
MEMxSET + 1
MEMxHIZ
RM0033 Rev 8
Flexible static memory controller (FSMC)
MEMxWAIT + 1
Valid
for timing configuration).
MEMxHOLD + 1
i15570b
Section 31.6.5)
Common
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