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Always program after erasing is
completed.Erasing is sometimes not
done finely,even though PROM-
writer or onboard serial writer
shows "PASS"in blank check. And
in that situation the data programed
successfully may be incorrect.
Rewriting the data to the address
where data has already set is forbid-
den.
Panasonic Semiconductor Development Company
B.5
Reprogramming Flow
Figure B-12 shows the flow for reprogramming (erasing and programming) the
flash memory.
Write 0s to entire memory
Reverse
Write user program
Figure B-12 EEPROM Programming Flow
As the figure shows, the write occurs after the memory is completely erased. The
erase routine consists of three steps, first writing all zeros to the entire memory
space, next erasing the memory, and finally reversing.
B.6
Programming Times
Table B-7 shows the time required for PROM and serial programming and repro-
gramming (erasing and programming).
Table B-7 Programming Times for PROM and Serial Writers
Writer
DATA-I/O LabSite DIP48-1
YDC AF200 (provisional)
Note: Times indicated are minimum time requirements.
328
Panasonic
MN102HF75K Flash EEPROM Version
Erase
Programming Time
Reprogramming
(User Program Only)
TBA
—
MN102H75K/F75K/85K/F85K LSI User Manual
Reprogramming Flow
Erase routine
Time
TBA
3.5–4 minutes
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