Hitachi F-ZTAT H8/3039 Series Hardware Manual page 546

Table 18-9 DC Characteristics (2) (cont)
Conditions: V = 3.0 V to 5.5 V, AV
CC
+75°C (regular specifications), T
(Programming/Erasing Conditions: V
(regular specifications), T
Item
Three-state Ports 1, 2, 3, 5,
leakage 6, 8 to B
current
(off state)
Input pull-up Ports 2 and 5
current
NMI, RES
Input
capacitance
All input pins
except NMI and
RES
Current Normal
2 5
dissipation operaqtion
* *
Sleep mode
Standby
mode
Analog power During A/D
supply current conversion
Idel
RAM standby voltage
Notes: 1. If the A/D converter is not used, do not leave the AV
Connect AV
2. Current dissipation values are for V
pins unloaded and the on-chip pull-up transistors in the off state.
3. The values are for V
4. I depends on V
CC
max = 3.0 (mA) + 0.7 (mA/MHz ⋅ V) × V
I
CC
max = 3.0 (mA) + 0.5 (mA/MHz ⋅ V) × V
I
CC
5. The current dissipation value when programming/erasing flash memory (T
+75°C (regular specifications), T
(max) higher than the current dissipation value in normal operation.
CC
= 0°C to +85°C (wide-range specifications))
a
Symbol
|I |
TSI
–I
p
C
in
4
I *
CC
3
*
AI
CC
V
RAM
to V , and connect AV
CC CC
≤ V
< 3.0 V, V
RAM CC
and f as follows:
CC
= 3.0 V to 5.5 V, V
SS
= –40°C to +85°C (wide-range specifications)
a
= 3.0 V to 3.6 V, T
CC
Min Typ
— —
10 —
— —
— —
— 15
(3.0V)
— 10
(3.0V)
— 0.01
— —
— 1.3
— 1.7
— 0.02
2.0 —
to V .
SS SS
= V – 0.5 V and V
IHmin CC
× 0.9, and V
= V
IHmin CC
× f [normal mode]
CC
× f [sleep mode]
CC
= 0°C to +85°C (wide-range specifications)) is 20 mA
a
1
= AV = 0 V* , T
SS a
= 0°C to +75°C
a
Max Unit Test Conditions
µA
1.0 V
–0.5V
µA
300 V
5.5V,
V
50 V
pF
f = 1MHz
20
pF T
41.5 f = 10MHz
mA
(5.5V)
30.5 f = 10MHz
mA
(5.5V)
µA
5.0 T
20.0
50°C
2.5 AV
mA
2.8 AV
µA
10.0
—
V
and AV pins open.
CC SS
= 0.5 V with all output
ILmax
= 0.3 V.
ILmax
= –20°C to
= 0.5 V to V
in CC
= 3.0V to
CC
= 0V
in
= 0V
in
= 25°C
a
≤ 50°C
a
< T
a
= 3.0V
CC
= 5.0V
CC
= 0°C to
a
539