Notes On Memory Programming - Hitachi F-ZTAT H8/3039 Series Hardware Manual

V
CC
RES
FWE
Note: Set the FWE input pin low level, except in the auto-program and auto-erase modes.
Figure 15-23 Oscillation Stabilization Time, Boot Program Transfer Time
15.8.9

Notes On Memory Programming

• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming (figure 15-24).
• When performing programming using PROM mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
2. In the PROM mode, auto-programming to a 128-byte programming unit block should
be performed only once.
Do not perform additional programming to a programmed 128-byte programming unit
block.
To reprogram, perform auto-programming after auto-erasing.
Figure 15-24 Reprogramming to Programmed Address
Memory read
mode
Command wait
t t state
osc1 bmv
programmed address
Auto-erase (chip batch)
Auto-program mode
Auto-erase mode
Reprogram to
Auto-program
End
Command wait state
Normal/abnormal
t
end identification
dwn
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