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7542 Group
A/D Converter Characteristics (Extended operating temperature 125 °C version)
Table 44 A/D Converter characteristics (Extended operating temperature 125 °C version)
(V
= 2.7 to 5.5 V, V
= 0 V, Ta = –40 to 125 °C, unless otherwise noted)
CC
SS
Symbol
Parameter
—
Resolution
—
Absolute accuracy
t
Conversion time
CONV
R
Ladder resistor
LADDER
I
Reference power source input current
VREF
I
A/D port input current
I(AD)
Note: AD conversion accuracy may be low under the following conditions;
(1) When the V
voltage is set to be lower than the V
REF
The accuracy is lower than the case the V
(2) When the V
voltage is 3.0 V or less at the low temperature, the AD conversion accuracy may be very lower than at room temperature.
REF
When system is used at low temperature, that V
Electrical Characteristics of 7542 Group Flash Memory (Extended operating temperature 125 °C version)
Table 45 Electrical Characteristics of 7542 Group Flash Memory (Extended operating temperature 125 °C version)
Symbol
Program/Erase endurance (Note 1)
Byte program time
Block erase time
t
Time delay from suspend request until erase suspend
d(SR-ES)
Erase suspend request interval
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Note 1. Definition of program and erase
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is "n" times (n = 100), "n" times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 2Kbyte block 2048 times and then erasing that block,
program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time erase. (disable overwriting).
Erase-suspend request
(interrupt request)
Erase suspend flag
Fig. 108 Time delay from suspend request until erase suspend
Rev.3.02
Oct 31, 2006
REJ03B0006-0302
Ta = 25 °C
V
= V
CC
REF
AD conversion clock = f(X
AD conversion clock = f(X
V
= 5.0 V
REF
V
= 3.0 V
REF
voltage, an analog circuit in this microcomputer is affected by noise.
CC
voltage is the same as V
REF
is 3.0 V or more is recommended.
REF
Parameter
Page 119 of 134
Test conditions
Mask ROM
= 2.7 to 5.5 V
FLASH ROM
)/2
IN
)
IN
voltage.
CC
Test
conditions
2Kbyte-block
8Kbyte-block
16Kbyte-block
Ta = 55 °C
t
d(SR-ES)
Limits
Min.
Typ.
Max.
10
± 3
± 4
122
61
55
50
150
200
30
90
120
5.0
Limits
Min.
Typ.
Max.
100
50
400
0.2
9
0.4
9
0.7
9
8
10
2.7
5.5
2.7
5.5
0
60
20
Unit
Bits
LSB
tc(X
)
IN
kΩ
µA
µA
Unit
times
µs
s
s
s
ms
ms
V
V
°C
year
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