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20. Flash Memory Version
20.1 Flash Memory Performance
In the flash memory version, rewrite operation to the flash memory can be performed in four modes: CPU
rewrite mode, standard serial I/O mode, parallel I/O mode, and CAN I/O mode.
Table 20.1 lists specifications of the flash memory version. (Refer to Table 1.1 or Table 1.2 for the items
not listed in Table 20.1.
Table 20.1 Flash Memory Version Specifications
Flash memory operating mode
Erase block
Program method
Erase method
Program, erase control method
Protect method
Number of commands
Program/Erase
Block 0 to 5 (program area)
Endurance
(1)
Block A and B (data are)
Data Retention
ROM code protection
NOTES:
1. Program and erase endurance definition
Program and erase endurance are the erase endurance of each block. If the program and erase endurance are n
times (n=100,1000,10000), each block can be erased n times. For example, if a 2-Kbyte block A is erased after
writing 1 word data 1024 times, each to different addresses, this is counted as one program and erasure.
However, data cannot be written to the same address more than once without erasing the block. (Rewrite
disabled)
2. To use the limited number of erasure efficiently, write to unused address within the block instead of rewrite. Erase
block only after all possible address are used. For example, an 8-word program can be written 128 times before
erase is necessary. Maintaining an equal number of erasure between Block A and B will also improve efficiency.
We recommend keeping track of the number of times erasure is used.
3. The M16C/29 Group, T-ver./V-ver. does not support the CAN I/O mode.
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4 modes (CPU rewrite, standard serial I/O, parallel I/O, CAN I/O)
See Figures 20.1 to 20.3 Flash Memory Block Diagram
In units of word
Block erase
Program and erase controlled by software command
Blocks 0 to 5 are write protected by FMR16 bit.
In addition, the block 0 and block 1 are write protected by FMR02 bit
5 commands
100 times
1,000 times (See Tables 1.6 to 1.8)
100 times 10,000 times (See Tables 1.6 to 1.8)
20 years (Topr = 55ϒ C)
Parallel I/O, standard serial I/O, and CAN I/O modes are supported.
20. Flash Memory Version
Specification
(3)
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