Edwards iXM Series Instruction Manual page 27

Chemical
Process gas
name
Ammonia NH
Sulphur Hexa- SF
fluoride
Silicon Tetra- SiCI
chloride
Fluorine F
2
Hydrogen Fluo- HF
ride
Hydrogen Chlor- HCI
ide
Chlorine Cl
2
Ammonia NH
Arsine AsH
Boron Trichloride BCl
Chloride Trifluor- ClF
ide
DCS SiCl
Diborane B
2
Nitrogen Trifluor- NF
ide
Phosphine PH
Silane SiH
TEOS SiC
Tungsten Hexa- WF
fluoride
* Threshold Limit Value (TLV)/Lower Explosive Limit (LEL) in Parts Per Million (PPM) 25% TLV/LEL
(ppm)
† Where Pass indicates permitted enclosure (satisfies SEMI S2 criteria of less than 25% of the TLV)
M56635880_D
M56635880_D - Technical data
Maximum
process TLV/LEL
gas flow (ppm)*
(slm)
10 25
3
0.2 1000
6
0.1 1
4
0.3 1
0.3 3
0.4 5
0.2 0.5
10 25
3
0.02 0.05
3
1 5
3
0.04 0.1
3
H 1 5
2 2
H 0.02 0.1
6
4 10
3
0.02 0.3
3
2 5
4
H O 2 10
8 20 4
1 3
6
N O re-
2
25%
lease
TLV/LEL
rate
(ppm)
(slm)
6.25 5
250 5
0.25 5
0.25 5
0.75 5
1.25 5
0.125 5
6.25 5
0.0125 5
1.25 5
0.025 5
1.125 5
0.025 5
2.5 5
0.075 5
1.25 5
2.5 5
0.75 5
Page 24
Maximum
N O de-
2
ERC
tected
Pass/Fail†
(ppm)
outside
enclosure
(ppm)
3 6.00 Pass
3 0.12 Pass
3 0.06 Pass
3 0.18 Pass
3 0.18 Pass
3 0.24 Pass
3 0.12 Pass
3 6.00 Pass
3 0.01 Pass
3 0.60 Pass
3 0.02 Pass
3 0.60 Pass
3 0.01 Pass
3 2.40 Pass
3 0.01 Pass
3 1.20 Pass
3 1.20 Pass
3 0.60 Pass
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