Samsung S3F84B8 User Manual page 293

S3F84B8_UM_REV 1.00
DEC R0
JP NZ，WR_BYTE
LD FMUSR,#00H
Case3. Programming to the flash memory space located in other sectors


WR_INSECTOR2:
LD R0,#40H
LD R1,#40H
LD FMUSR,#0A5H
LD FMCON,#01010000B
LD FMSECH,#01H
LD FMSECL,#00H
LD R9,#0CCH
LD R10,#01H
LD R11,#40H
CALL WR_BYTE
LD R0,#40H
WR_INSECTOR5:
LD FMSECH,#02H
LD FMSECL,#80H
LD R9,# 55H
LD R10,#02H
LD R11,#90H
CALL WR_BYTE
WR_INSECTOR12:
; Checks whether the end address for programming reaches 0640H.
; Disables User Program mode
; Enables User Program mode
; Selects Programming mode and starts programming
; Sets the base address of sector located in target address to write data
; Sector 2's base address is 100H
; Loads data "CCH" to write
; Loads flash memory upper address into upper register of pair working
; register
; Loads flash memory lower address into lower register of pair working
; register
; Sets the base address of sector located in target address to write data
; Sector 5's base address is 0280H
; Loads data "55H" to write
; Loads flash memory upper address into upper register of pair working
; register
; Loads flash memory lower address into lower register of pair working
; register
19-12
19 EMBEDDED FLASH MEMORY INTERFACE