Programming - Samsung S3F84B8 User Manual

S3F84B8_UM_REV 1.00 19 EMBEDDED FLASH MEMORY INTERFACE

19.1.7 PROGRAMMING

Flash memory is programmed in one-byte unit after sector erase. The write operation of programming is executed
using the LDC instruction.
Program Procedure in User Program Mode
To program Flash memory in User Program mode, follow these steps:
1. Erase target sectors before programming (mandatory).
2. Set Flash Memory User Programming Enable Register (FMUSR) to "10100101B".
3. Set Flash Memory Control Register (FMCON) to "0101000XB".
4. To write data, set Flash Memory Sector Address Registers (FMSECH and FMSECL) to the sector base
address of destination address.
5. Load transmission data into working register.
6. Load flash memory upper address into upper register of pair working register.
7. Load flash memory lower address into lower register of pair working register.
8. Load transmission data to flash memory location area using 'LDC' instruction by indirectly addressing mode.
9. Set Flash Memory User Programming Enable Register (FMUSR) to "00000000B".
NOTE: In programming mode, FMCON.0 could either be '0' or '1'.
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