Samsung S3F84B8 User Manual page 292

S3F84B8_UM_REV 1.00
Case1. 1-Byte Programming
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WR_BYTE:
LD FMUSR,#0A5H
LD FMCON,#01010000B
LD FMSECH, #03H
LD FMSECL, #00H
LD R9,#0AAH
LD R10,#03H
LD R11,#10H
LDC @RR10,R9
LD FMUSR,#00H
Case2. Programming in the same sector
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WR_INSECTOR:
LD R0,#40H
LD FMUSR,#0A5H
LD FMCON,#01010000B
LD FMSECH,#06H
LD FMSECL,#00H
LD R9,#33H
LD R10,#06H
LD R11,#00H
WR_BYTE:
LDC @RR10,R9
INC R11
Example 19-2 Programming
; Writes data "AAH" to destination address 0310H
; Enables User Program mode
; Selects Programming mode
; Sets the base address of sector (0300H)
; Loads data "AA" to write
; Loads flash memory upper address into upper register of pair working
; register
; Loads flash memory lower address into lower register of pair working
; register
; Writes data "AAH" to flash memory location (0310H)
; Disables User Program mode
; RR10-->Address copy (R10-high address,R11-low address)
; Enables User Program mode
; Selects Programming mode and starts programming
; Sets the base address of sector located in target address to write data
; Sector 12's base address is 0600H.
; Loads data "33H" to write
; Loads flash memory upper address into upper register of pair working
; register
; Loads flash memory lower address into lower register of pair working
; register
; Writes data "33H" to flash memory location
; Resets address in the same sector by INC instruction
19-11
19 EMBEDDED FLASH MEMORY INTERFACE