So-Dimm Decoupling Recommendation; Fsb; Figure 114. 852Gme Hxswing & Hyswing Reference Voltage Generation Circuit - Intel 852GME Design Manual

Platform Design Checklist
14.8.1.3.

SO-DIMM Decoupling Recommendation

Pin Name
Vcc1_25
Vcc2_5Sus
14.8.2.

FSB

Pin Name
HXSWING,
HYSWING
HXRCOMP,
HYRCOMP
HDVREF[2:0]
HAVREF
HCCVREF
Figure 114. 852GME HXSWING & HYSWING Reference Voltage Generation Circuit
250
F Qty
0.1 µF
0.01 µF
0.1 µF 9
100-150 µF 4
System
Pull-up/Pull-down
301 1% pull-up to VCC
150 1% pull-down to gnd
27.4 1% pull down to gnd
49.9 1% pull-up to VCC
100 1% pull-down to gnd
49.9 1% pull-up to VCC
100 1% pull-down to gnd
49.9 1% pull-up to VCC
100 1% pull-down to gnd
+VCC
301R1a
1%
HXSWING
150
1% C1a
® ®
Intel 852GME, Intel 852GMV and Intel
Notes
Place one 0.1 µF cap and one 0.01 µF close to every 4 pull-
up resistors terminated to Vcc1_25 (VTT for DDR signal
termination). In S3, Vcc1_25 is powered OFF.
A minimum of 9 high frequency caps are recommeneded to
be placed bewteen the SO-DIMMS. A minimum of 4 low
frequency caps are required.
Signal voltage level = 1/3 of VCC. C1a=0.1 µF. C1b=0.1
µF. Trace should be 10-mil wide with 20-mil spacing.
See Figure 114.
One pulled-down resistor per pin. Trace should be 10-mil
wide with 20-mil spacing.
Signal voltage level = 2/3 of VCC. Need one 0.1 µF cap
and one 1 µF cap for voltage divider.
Signal voltage level = 2/3 of VCC. Need one 0.1 µF cap
and one 1 µF cap for voltage divider.
Signal voltage level = 2/3 of VCC. Need one 0.1 µF cap
and one 1 µF cap for voltage divider.
HYSWING]
HXSWING HYSWING
GMCH
®
852PM Chipset Platforms Design Guide
Notes
+VCC
301
1%
150
C1b 1%
R