B Glossary; Power Fet Capacitance; Igbt Capacitance - Keysight PD1000A Startup Manual

Power device measurement system for advanced modeling
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PD1000A Power Device Measurement System for Advanced Modeling
Startup Guide
B
Glossary
Typical capacitance parameters of power devices are not always the same as the
physical parameters of the device terminal capacitances (C
example) as shown next. It requires some interpretation to convert them to the
data sheet parameters. For example, C
capacitances.

Power FET Capacitance

Device terminal capacitance:
Capacitance parameter described in device data
sheet:

IGBT Capacitance

Device terminal capacitance:
Capacitance parameter described in device data
sheet:
– C
: Gate to source capacitance
gs
– C
: Gate to drain capacitance
gd
– C
: Drain to source capacitance
ds
– C
: Input capacitance
iss
– C
: Output capacitance
oss
– C
: Reverse transfer capacitance
rss
– C
: Gate to emitter capacitance
ge
– C
: Gate to collector capacitance
gc
– C
: Drain to emitter capacitance
ce
– C
: Input capacitance
ies
– C
: Output capacitance
oes
– C
: Reverse transfer capacitance
res
, C
gd
is sum of C
and C
iss
gd
gs
, C
as an
gs
ds
device terminal
99

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